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NTB6410AN, NTP6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW
Features
* * * *
Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb-Free Devices
V(BR)DSS 100 V Unit V V A
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ID MAX (Note 1) 76 A
RDS(ON) MAX 13 mW @ 10 V
MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Continuous Drain Current RqJC Power Dissipation RqJC Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 76 54 188 305 -55 to +175 76 500 W A C A mJ
N-Channel D
G S 4 4 1 2 3
tp = 10 ms
Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 57.7 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds
TL
260
C 1 2
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Case (Drain) Steady State Junction-to-Ambient (Note 1) Symbol RqJC RqJA Max 0.8 32 Unit C/W
TO-220AB CASE 221A STYLE 5 3
D2PAK CASE 418B STYLE 2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces).
4 Drain
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
NTP 6410ANG AYWW 1 Gate 2 Drain 3 Source 1 Gate
NTB 6410ANG AYWW 2 Drain 3 Source
6410AN = Specific Device Code G = Pb-Free Device A = Assembly Location Y = Year WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2009
December, 2009 - Rev. 0
1
Publication Order Number: NTB6410AN/D
NTB6410AN, NTP6410AN
ELECTRICAL CHARACTERISTICS (TJ = 25C Unless otherwise specified)
Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(th) VGS(th)/TJ RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGP RG td(on) tr td(off) tf VSD trr ta tb QRR VGS = 0 V, IS = 76 A, dISD/dt = 100 A/ms TJ = 25C TJ = 125C VGS = 10 V, VDD = 80 V, ID = 76 A, RG = 6.2 W VGS = 10 V, VDS = 80 V, ID = 76 A VDS = 25 V, VGS = 0 V, f = 1 MHz VGS = 10 V, ID = 76 A VGS = 10 V, ID = 20 A Forward Transconductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Plateau Voltage Gate Resistance 4500 650 250 120 5.2 20 57 5.1 2.4 V W ns nC pF VDS = 5 V, ID = 20 A VGS = 0 V, VDS = 100 V TJ = 25C TJ = 150C VGS = 0 V, ID = 250 mA 100 94 1.0 100 $100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance
VDS = 0 V, VGS = $20 V VGS = VDS, ID = 250 mA 2.0 9.0 11 10 40
4.0
V mV/C
13 12
mW
S
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage IS = 76 A 1.0 0.9 93 69 24 300 nC ns 1.3 V 17 170 120 190
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.
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2
NTB6410AN, NTP6410AN
160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0 VGS = 4.4 V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 5.4 V 5.0 V 6.0 V TJ = 25C 10 V 7.0 V ID, DRAIN CURRENT (A) 6.5 V 160 140 120 100 80 60 40 20 0 2 3 4 5 TJ = 125C TJ = 25C TJ = -55C VDS w 10 V
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID = 76 A TJ = 25C 0.030 0.025 0.020 0.015 0.010 0.005 0.000
Figure 2. Transfer Characteristics
VGS = 10 V
0.035
TJ = 175C TJ = 125C
0.025
TJ = 25C TJ = -55C
0.015
0.005
5
6
7
8
9
10
10
20
30
40
50
60
70
80
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On-Region versus Gate Voltage
Figure 4. On-Region versus Drain Current and Gate Voltage
100000
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
2.5
VGS = 10 V ID = 76 A
VGS = 0 V TJ = 150C
2
IDSS, LEAKAGE (nA)
10000
1.5
TJ = 125C 1000
1
0.5 -50
-25
0
25
50
75
100
125
150
175
100
10
20
30
40
50
60
70
80
90
10
Figure 5. On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERTURE (C)
Figure 6. Drian-to-Source Leakage Current versus Voltage
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
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3
NTB6410AN, NTP6410AN
QT VGS Qgd VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1.1 VGS, GATE-TO-SOURCE VOLTAGE (V) 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 1000 0 Crss 0 10 20 30 40 50 60 70 80 90 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Coss Ciss TJ = 25C VGS = 0 V 10 8 VDS 6 4 2 0 Qgs 100 80 60 40 VDS = 80 V ID = 76 A TJ = 25C 0 20 40 60 80 100 20 0 120
100
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000 VDS = 80 V ID = 76 A VGS = 10 V
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
80 IS, SOURCE CURRENT (A) 70 60 50 40 30 20 10 TJ = 25C VGS = 0 V
100 t, TIME (ns)
tf tr
td(on) td(off)
10
1
1
10 RG, GATE RESISTANCE (W)
100
0 0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
1000 AVALANCHE ENERGY (mJ) 500
Figure 10. Diode Forward Voltage versus Current
ID = 57.7 A
ID, DRAIN CURRENT (A)
100
10 ms 100 ms
400 300 200 100 0 25
10
1 ms 10 ms dc
1
0.1 1
RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT
VGS = 10 V SINGLE PULSE TC = 25C
10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
1000
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased Safe Opeating Area
Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature
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4
NTB6410AN, NTP6410AN
1 D = 0.5 0.2 R(t) (C/W) 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE
0.001 0.000001
0.00001
0.0001
0.001
0.01 0.1 t, PULSE TIME (s)
1.0
10
100
1000
Figure 13. Thermal Response ORDERING INFORMATION
Device NTB6410ANG NTB6410ANT4G NTP6410ANG Package D2PAK (Pb-Free) D2PAK (Pb-Free) TO-220 (Pb-Free) Shipping 50 Units / Rail 800 / Tape & Reel 50 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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5
NTB6410AN, NTP6410AN
PACKAGE DIMENSIONS
D2PAK 3 CASE 418B-04 ISSUE K
C E -B-
4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40
V W
1
2
3
S
A
-T-
SEATING PLANE
K G D 3 PL 0.13 (0.005) H
M
J
W
TB
M
VARIABLE CONFIGURATION ZONE L M
R
N U L
P L M
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
M
F VIEW W-W 1
F VIEW W-W 2
F VIEW W-W 3
SOLDERING FOOTPRINT*
10.49
8.38 16.155
3.504 1.016 5.080 PITCH
DIMENSIONS: MILLIMETERS 2X
2X
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTB6410AN, NTP6410AN
PACKAGE DIMENSIONS
TO-220 CASE 221A-09 ISSUE AF
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
-T- B
4
SEATING PLANE
F
T
C S
Q
123
A U K
H Z L V G D N
R J
STYLE 5: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTB6410AN/D

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